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09/02/02 GA100TS60U "half-bridge" igbt int-a-pak features v ces = 600 v v ce (on) typ. = 1.6v @v ge = 15v , i c = 100a parameter typ. max. units r jc thermal resistance, junction-to-case - igbt ? 0.38 r jc thermal resistance, junction-to-case - diode ? 0.70 c/w r cs thermal resistance, case-to-sink - module 0.1 ? mounting torque, case-to-heatsink ? 6.0 n m mounting torque, case-to-terminal 1, 2 & 3 ? 5.0 weight of module 200 ? g thermal / mechanical characteristics ultra-fast tm speed igbt absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 100 i cm pulsed collector current 200 a i lm peak switching current? 200 i fm peak diode forward current 200 v ge gate-to-emitter voltage 20 v v isol rms isolation voltage, any terminal to case, t = 1 min 2500 p d @ t c = 25c maximum power dissipation 320 w p d @ t c = 85c maximum power dissipation 170 t j operating junction temperature range -40 to +150 c t stg storage temperature range -40 to +125 ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode very low conduction and switching losses hexfred ? antiparallel diodes with ultra- soft recovery industry standard package ul recognition pending benefits increased operating efficiency direct mounting to heatsink performance optimized for power conversion: ups, smps, welding lower emi, requires less snubbing generation 4 igbt technology www.irf.com 1
2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 443 664 v cc = 400v q ge gate - emitter charge (turn-on) ? 86 129 nc i c = 66a q gc gate - collector charge (turn-on) ? 150 225 t j = 25c t d(on) turn-on delay time ? 168 ? r g1 = 27 ? , r g2 = 0 ? t r rise time ? 145 ? ns i c = 100a t d(off) turn-off delay time ? 320 ? v cc = 360v t f fall time ? 242 ? v ge = 15v e on turn-on switching energy ? 4.0 ? mj e off (1) turn-off switching energy ? 7.0 ? e ts (1) total switching energy ? 11 17 c ies input capacitance ? 9837 ? v ge = 0v c oes output capacitance ? 615 ? pf v cc = 30v c res reverse transfer capacitance ? 128 ? ? = 1 mhz t rr diode reverse recovery time ? 143 ? ns i c = 100a i rr diode peak reversecurrent ? 95 ? a r g1 = 27 ? q rr diode recovery charge ? 6813 ? nc r g2 = 0 ? di (rec) m /dt diode peak rate of fall of recovery ? 1883 ? a/s v cc = 360v during t b di/dt?1300a/s parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage ? 1.6 2.1 v ge = 15v, i c = 100a ? 1.6 ? v v ge = 15v, i c = 100a, t j = 125c v ge(th) gate threshold voltage 3.0 ? 6.0 i c = 500a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 500a g fe forward transconductance ? ? 107 ? s v ce = 25v, i c = 100a i ces collector-to-emitter leaking current ? ? 1.0 ma v ge = 0v, v ce = 600v ??10 v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage - maximum ? 3.6 ? v i f = 100a, v ge = 0v ? 3.5 ? i f = 100a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v dynamic characteristics - t j = 125c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
www.irf.com 3 0.1 1 10 100 0 20 40 60 80 100 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 10 100 1000 0.8 1.2 1.6 2.0 2.4 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15 v 20s pulse width ge t = 125 c j t = 25 c j 1 10 100 1000 5 6 7 8 9 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 125 c j o
for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave:
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fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 50 c i = a 100 c i = a 200 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 1 thjc t , rectangular pulse duration (seconds) d = 0.50 single pulse (thermal resistance) thermal impedance - z p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0.01 0.20 0.10 0.05 0.02
www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 10 20 30 40 50 8 10 12 14 16 18 r , gate resistance (ohm) total switching losses (mj) g v = 360v v = 15v t = 25 c i = 100a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 360v g ge cc i = a 200 c i = a 100 c i = a 50 c
? ? ? 1 10 100 0 4000 8000 12000 16000 20000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 100 200 300 400 500 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 66a cc c
6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - reverse bias soa fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 14 - typical stored charge vs. di f /dt 0 40 80 120 160 200 0 5 10 15 20 25 30 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 0v v = 15v g j cc ge ? ? 0 50 100 150 200 250 300 0 100 200 300 400 500 600 700 ce safe operating area v , collector-to-emitter voltage (v) a v = 20v t = 125c v measured at terminal (peak voltage) ge j ce 10 100 1000 1.0 2.0 3.0 4.0 5.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 125c t = 25c j j 0 2000 4000 6000 8000 10000 12000 500 1000 1500 2000 f di /dt - (a/s) rr q - (nc) i = 200a i = 100a i = 50a f f f r j j v = 360v t = 125c t = 25c
www.irf.com 7 fig. 15 - typical reverse recovery vs. di f /dt fig. 16 - typical recovery current vs. di f /dt 80 120 160 200 240 500 1000 1500 2000 f di /dt - (a/s) t - (ns) rr i = 200a i = 100a i = 50a f f f r j j v = 360v t = 125c t = 25c 0 30 60 90 120 150 500 1000 1500 2000 f di /dt - (a/s) i - (a) irrm i = 200a i = 100a i = 50a f f f r j j v = 360v t = 125c t = 25c
8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = fig. 18 - test waveforms for circuit of fig. 17, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 17 - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 19 - test waveforms for circuit of fig. 17, defining e on , t d(on) , t r fig. 20 - test waveforms for circuit of fig. 17, defining e rec , t rr , q rr , i rr
www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 figure 22.

figure 21.

10 www.irf.com case outline ? int-a-pak notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. see fig. 17 for screws m6. for screws m5. pulse width 50s; single shot. 9 8 10 11 4 5 7 6 3 2 1 1 . al l dime ns i ons ar e s h own i n mil l i me t e r s [inch e s ]. 2. cont rol l ing dime ns ion: mil l ime t e r. not es: 4x f as t on t ab (110) 2.8 x 0.5 [.110 x .020] 3x m5 8 [.314] max. 2x ? 6.80 6.20 [ .267 .244 ] 4.50 3.50 [ .177 .138 ] 32.00 31.00 [ 1.260 1.220 ] 24.00 23.00 [ .945 .906 ] 30.50 29.00 [ 1.201 1.142 ] 92.10 91.10 [ 3.626 3.587 ] 8.00 6.60 [ .315 .260 ] 8.65 7.65 [ .341 .301 ] 94.70 93.70 [ 3.728 3.689 ] 2x 23.50 22.50 [ .925 .886 ] 80.30 79.70 [ 3.161 3.138 ] 17.50 16.50 [ .689 .650 ] 42.00 41.00 [ 1.654 1.614 ] 34.70 33.70 [ 1.366 1.327 ] 2x 13.30 12.70 [ .524 .500 ] 0.15 [.0059] conve x data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/02

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